- 您现在的位置：买卖IC网 > Sheet目录134 > ISL9R860S3ST (Fairchild Semiconductor)DIODE STEALTH 600V 8A TO-263AB
   ISL9R860P2, ISL9R860S3ST — STEALTH? Diode ISL9R860P2, ISL9R860S3ST Features Applications ? SMPS FWD ? Hard Switched PFC Boost Diode ? UPS Free Whe eling Diod e ? Motor Drive FWD ? Snubber Diode Device Maximum Ratings TC= 25°C unless otherwise noted Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 147 oC) 8 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A PD Power Dissipation 85 W EAVL Avalanche Energy (1 A, 40 mH) 20 mJ TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 300 260 °C °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. K A CATHODE (FLANGE) CATHODE ANODE JEDEC TO-263AB(D2-PAK) JEDEC T O-220AC-2L CATHODE (FLANGE) ANODE N/C Package Symbol November 2013 ? Stealth Recovery trr = 28 ns (@ I F = 8 A) ? Max Forward Voltage, VF = 2.4 V (@ T C = 25°C) ? 600 V Reverse Voltage and High Reliability ? Avalanche Energy Rated ? RoHS Compliant 8 A, 600 V, STEALTH? Diode The ISL9R860P2, ISL9R860S3ST is a STEALTH? diode optimized for low loss performance in high frequency hard switched applications. The STEALTH? family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode maybe operated without the use of additional snubber circuitry. Consider using the STEALTH?diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. ?2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C1 www.fairchildsemi.com 1 Description |